I. ZherebtsovBasic ElectronicsI. ZherebtsovBasic Electronics The subject-matter of the book co­vers a wide range of material specific to electronics – from the basic prin­ciples underlying it to sophisticated devices employed in a multitude of applications. Among other things, there is a fairly detailed discussion of semiconductor materials and devices, electron tubes, photocells, optoelect­ronic devices, and integrated circuits. The text is liberally illustrated and includes a discussion of reliability and testing. The book has been conceived as an aid in the study of electronics by college students, those relying on self-education, and hobbyists.Docent Ivan P. Zherebtsov, Cand. (Pedagog. Sc.) taught electrical en­gineering and radio engineering at secondary educational establish­ ments since 1928, has been lecturing on these subjects at colleges since 1946. Is a leading Soviet authority in the field of telecommunications. Has penned over 40 books and booklets many of which have been translated into foreign languages or published outside the Soviet Union. The most important of them are Radio Engi­neering (five editions), Basic Electro­nics (four editions). Electric and Magnetic Circuits (two editions), An Introduction to UHF-SHT Radio En­gineering (three editions). Honorary member of the A. S. Popov Scientific and Technical Society on Radio, Electronics, and Communications.First published 1988Revised from the 1985 Russian editionTranslated from the Russian by Boris V. KuznetsovPreface 9 Introduction 10I-1 Electronics Defined 10I-2 A Brief Historical Outline 10I-3 Requirements for Electronic Components 13I-4 Semiconductor Devices in Electronics 16PART ONE. SEMICONDUCTOR DEVICES Chapter 1 Electric Conduction in Semiconductors 181-l Electrons in Solids 181-2 Intrinsic Electron and Hole Conduction. Drift Current 201-3 Extrinsic Conduction 241-4 Carrier Diffusion in Semiconductors 26Chapter 2 P-N and Metal-Semiconductor Junctions 282-1 A P-N Junction with No External Voltage Applied 282-2 The Forward-Biased P-N Junction 312-3 The Reverse-Biased P-N Junction 332-4 The Metal-Semiconductor Junction 34Chapter 3 Semiconductor Diodes 353-1 The Current-Voltage Characteristic of the Semiconductor Diode 353-2 The Capacitance of a Semiconductor Diode 373-3 The Temperature Behaviour of Semiconductor Diodes 383-4 The Operation of the Diode at Load 393-5 Semiconductor Diodes as Rectifiers 413-6 Series and Parallel Connection of Diodes 45 3-7 The Pulsed Operation of Semiconductor Diodes 3-8 Basic Types of Semiconductor Diodes 48Chapter 4 Bipolar Transistors 534-1 General Principles 534-2 Physical Processes in a Transistor 544-3 Amplification by a Transistor 594-4 The Basic Circuit Configurations of Transistors4-5 Bias Supply and Temperature Compensation for Transistors 64 4-6 Transistors in Amplifiers and Oscillators 67Chapter 5 Characteristics and Parameters of Bipolar Transistors 68 5-1 Characteristics of Transistors 685-2 Parameters and Equivalent Circuits of Transistors 73Chapter 6 Dynamic Operation of Bipolar Transistors 806-1 Calculation of Dynamic Operation of Transistors 806-2 The Effect of Temperature on the Performance of Transistors 866-3 The Frequency Behaviour of Transistors 886-4 Transistors as Switches 906-5 Frequency Changing by Semiconductor Devices 916-6 Inherent Noise in Transistors 956-7 Basic Types of Bipolar Transistors 97Chapter 7 Field-Effect Transistors and Thyristors 1027-1 Field-Effect Transistors 102 7-2 Thyristors 109Chapter 8 Miscellaneous Semiconductor Devices8-1 The Tunnel Diode 1138-2 Microwave Semiconductor Diodes 117 8-3 Avalanche Diodes and Gunn Diodes 119 8-4 Heterojunction Devices 1218-5 The Unijunction Transistor 1228-6 Semiconductor Resistors 122Chapter 9 An Outline of Integrated Circuits 1239-1 General 1239-2 Film and Hybrid Integrated Circuits 1259-3 Monolithic Integrated Circuits 1279-4 Charge-Coupled Devices and Integrated Injection Logic (I2L) Chips 135PART TWO. ELECTRON TUBES Chapter 10 Behaviour of Electrons in Electric and Mag­netic Fields 13910-1 The Motion of Electrons in a Uniform Electric Field 139 10-2 The Motion of Electrons in a Nonuniform Electric Field 142 10-3 The Motion of Electrons in a Uniform Magnetic Field 143Chapter 11 The Basic Structure and Operation of Electron Tubes 14511-1 A General Outline and Classification of Electron Tubes 14511-2 The Basic Structure and Operation of the Diode 146 11-3 The Basic Structure and Operation of the Triode 148 11-4 Electron Emission 14911-5 The Parameters of Thermionic Cathodes 15211-6 Cathodes 15211-7 Directly and Indirectly Heated Cathodes 15411-8 Anode and Grid Types for Vacuum Tubes 15611-9 Vacuum in Vacuum Tubes. Tube Envelopes 15811-10 Electrode Mounting and Electrode Leads 158Chapter 12 Diodes 16012-1 Physical Processes 16012-2' The Three-Halves Power Law 16212-3 The Current-Voltage Characteristic of a Vacuum Diode 12-4 The Parameters of the Vacuum Diode 16312-5 Dynamic Operation of a Vacuum Diode. Rectification of Alternating Current 16512-6 Diode Types 166Chapter 13 Vacuum Triodes 16713-1 Physical Processes13-2 Current Division 17013-3 The Virtual Voltage and the Three-Halves Power Law 171 13-4 Characteristics of the Vacuum Triode 17213-5 The Operating Conditions, Absolute Maximum Ratings and Parameters of the Vacuum Triode 175 13-6 Grid Current 181Chapter 14 The Vacuum Triode in Operation at Load 18214-1 General 18214-2 An Amplifier Stage Using a Vacuum Triode 18314-3 Amplifier Stage Parameters 18714-4 The Analytical Method and the Equivalent Circuits of an Amplifier Stage 18914-5 Graphical Analysis of Triode Performance at Load 192 14-6 The Vacuum Triode as an Oscillator 19514-7 The Interelectrode Capacitances of a Vacuum Triode 19514-8 Common-Grid and Common-Anode Stages 19814-9 Limitations of the Vacuum Triode 19914-10 Basic Types of Receiving-Amplifying Vacuum TriodesChapter 15 Tetrodes, Pentodes and Miscellaneous Tubes 19915- 1 The Vacuum Tetrode 19915-2 Secondary Electron Emission in the Vacuum Tetrode 20215-3 The Pentode 20315-4 Current Division in the Pentode 20415-5 Connection of Tetrodes and Pentodes in Circuits 20515-6 The Characteristics of Tetrodes and Pentodes 20615-7 The Parameters of Tetrodes and Pentodes 20815-8 The Interelectrode Capacitances of Tetrodes and Pentodes 20815-9 The Beam Power Tetrode 21015-10 The Characteristics and Parameters of the Beam Tetrode 21115-11 The Dynamic Operation of Tetrodes and Pentodes 21215-12 Variable-Mu Tubes 21415-13 Basic Types of Tetrodes and Pentodes 21515-14 Miscellaneous Tubes 215Chapter 16 Cathode-Ray Tubes 21716-1 General 21716-2 The Electrostatic CRT 21716-3 The Supply Circuits of the CRT 21816-4 The Electron Gun of an Electrostatic CRT16-5 Electrostatic Beam Deflection 22216-6 Measurement and Visual Observation of Alternating Voltages with a Cathode-Ray Tube 22316-7 Image Distortion in Electrostatic CRTs 22516-8 The Magnetic CRTs 22616-9 The Fluorescent Screen 22916-10 Basic Types of CRTs for Oscilloscopes and TV 232 16-11 Shaped-Beam Character Display Tubes 233Chapter 17 Gas-Discharge and Indicator Tubes 23417-1 Gaseous Discharges 23417-2 Forms of Gaseous Discharge 23517-3 Glow Discharge 23617-4 Voltage-Regulator Tubes 24017-5 Circuits Using VR Tubes 24217-6 Glow-Discharge Thyratrons 24417-7 Character Display and Numerical Readout Devices 24617-8 Miscellaneous Gas-Discharge Devices 249Chapter 18 Tube Noise 25018-1 Sources of Tube Noise 25018-2 The Noise Performance of Vacuum Tubes 250Chapter 19 Operation of Vacuum Tubes at Microwave Frequencies 25219-1 The Effects of Interelectrode Capacitances and Lead Induc­tances 25219-2 Electron-Inertia Effects 25319-3 Electrostatically Induced Currents in the Circuits of Vacuum Tubes 25419-4 The Input Resistance of and Power Dissipation in Tubes 25719-5 Tubes in Pulse Operation 26019-6 Microwave Vacuum Tubes 261Chapter 20 Advanced Types of Microwave Tubes20-1 General 26320-2 The Drift-Tube Klystron 26320-3 The Reflex Klystron 26720-4 The Magnetron 27020-5 Travelling-Wave and Backward-Wave Tubes 27520-6 The Amplitron and the Carmatron 280Chapter 21 Reliability and Testing of Electron Devices 28121-1 Reliability and Testing of Semiconductor Devices 281 21- 2 Reliability and Testing of Tubes 283PART THREE. PHOTOELECTRIC AND OPTOELECTRONIC DEVICESChapter 22 Photoelectric Devices 28622- 1 Photoelectric Emission 286 22-2 Phototubes 28722-3 The Photomultiplier Tube 288Chapter 23 Semiconductor Optoelectronic Devices 29023-1 General 29023-2 Bulk Photoconductors (Photoresistors) 23-3 Photodiodes 29223-4 Semiconductor Photovoltaic Cells23-5 Phototransistors 29423-6 Photothyristors 29523-7 Light-Emitting Diodes (LEDs) 29623-8 Optocouplers (Optoisolators) 298Conclusion 301 Index 303